Dr.Ahn at the 62nd IEDM (IEEE Electron Devices Meeting) conference

Dr. Ahn has attended the 62nd IEDM (IEEE Electron Devices Meeting) conference this year, which is one of the largest and highest-honor international conferences in the electronics devices research area. It was held in San Francisco, California, at the Hilton Union Square Hotel, on December 3-7, 2016. He participated in a wide range of tutorials, short courses, and technical sessions during the conference week; 2016 IEDM technical sessions covered Memory Technology, Compound Semiconductor and High Speed Devices, Power Device Technology, Sensors, MEMS, and BioMEMS, Modeling and Simulation, Optoelectronics, Displays, and Imagers, and Process and Manufacturing Technology. This year’s IEDM featured a special MRAM (magnetic RAM) poster session, where Dr. Ahn interacted with numerous world-class researchers and engineers from all over the world. Since emerging memory and spintronics fall into a main research project category at UTSA Nanoelectronics Lab, some knowledge and information obtained in this special MRAM session will play an important role to initiate future collaborations with renowned MRAM research groups in the world, including IBM (Yorktown Heights), Singulus (Germany), Spintec (France), Tohoku University (Japan). Dr. Ahn has spent quite a lot of his time in this conference to enjoy numerous reunions and events with his Stanford/IBM/Samsung/KIST colleagues and alumni to discuss technological advances and challenges in the field. Dr. Ahn co-authored a paper, titled “Microsecond Transient Thermal Behavior of HfOx-Based Resistive Random Access Memory Using a Micro Thermal Stage (MTS),” in this year’s IEDM. This work has been presented by Z. Jiang (Stanford PhD student) at the session 21.3 on Tuesday, December 6. The picture is taken with Dr. Ahn’s Stanford friends (currently PhD students in Prof. Wong’s group), Haitong Li, Ling Li, and Scott Fong (from left to right).

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